Keyword Analysis & Research: mosfet rds vs vgs


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Frequently Asked Questions

What is VDS and VGS in MOSFET?

1.1Drain-Source Voltage (VDS) VDS represents MOSFET absolute maximum voltage between Drain and Source. In operations, voltage stress of Drain-Source should not exceed maximum rated value. 1.2Gate-Source Voltage (VGS)

Is there much RDSon variation in a MOSFET?

There's not much Rdson variation. You can get a sense for how much this changes by looking at the VI curves on your particular MOSFET's datasheet. For example, take a look at the IRFP260N: These are the current vs. voltage characteristics for various gate voltages.

What is GFS in MOSFET?

Forward transconductance, gfs, represents the signal gain (drain current divided by gate voltage) of a MOSFET. Higher gfs indicates the high current (IDS) handling capability can be gained from the low gate voltage (VGS). It is also expressed as below equation.

What are the parameters of a MOSFET?

This is perhaps one of the most important parameters as this determines the losses and self-heating that would occur within the MOSFET while it is conducting. There is a threshold voltage (Vth) at which the MOSFET is considered to start conducting, normally the voltage at which Igs = 250uA given Vds = Vgs.


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