|mosfet rds formula||1.08||0.6||8712||2|
|mosfet rds equation||1.12||0.4||7772||53|
|mosfet rdson saturation||0.64||0.1||4477||90|
|mosfet rdson calculation||1.48||0.9||2992||78|
|mosfet rds vs vgs||1.25||0.3||9148||90|
|mosfet rds vs temp||0.11||0.4||3432||47|
|mosfet rds current sense||1.64||0.2||970||87|
|mosfet rdson junction temperature||0.1||0.3||8662||42|
|mosfet rdson temperature coefficient||1.11||0.7||110||67|
R DS (on) stands for "drain-source on resistance," or the total resistance between the drain and source in a Metal Oxide Field Effect Transistor, or MOSFET when the MOSFET is "on." R DS (on) is the basis for a maximum current rating of the MOSFET and is also associated with current loss.What is source and drain area of a MOSFET?
If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that flow through the channel; similarly, the drain is where the charge carriers leave the channel.What is the use of a MOSFET?
MOSFET is a metal oxide semiconductor field effect transistor. It is a four terminal device that is used to switch electronic signals.